STD30N6LF6AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

130 mJ

FET Type :

N-Channel

Terminal Position :

Single

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

Automotive, AEC-Q101, STripFET™ F6

Pulsed Drain Current-Max (IDM) :

96A

Drain to Source Voltage (Vdss) :

60V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Power Dissipation-Max :

40W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

24A

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.03Ohm

Rds On (Max) @ Id, Vgs :

25m Ω @ 12A, 10V

Number of Terminations :

2

Case Connection :

DRAIN

Base Part Number :

STD30N

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 25V

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)