STD30N6LF6AG
- Mfr.Part #
- STD30N6LF6AG
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 24A DPAK
- Stock
- 11,616
- In Stock :
- 11,616
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101, STripFET™ F6
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 130 mJ
- Continuous Drain Current (ID) :
- 24A
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- JESD-30 Code :
- R-PSSO-G2
- DS Breakdown Voltage-Min :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Part Number :
- STD30N
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Packaging :
- Cut Tape (CT)
- Drain to Source Voltage (Vdss) :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 96A
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 12A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1320pF @ 25V
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 40W Tc
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.03Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Datasheets
- STD30N6LF6AG
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N-Channel Cut Tape (CT) 25m Ω @ 12A, 10V ±20V 1320pF @ 25V 26nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
STD30N6LF6AG Description
The device is an N-channel power MOSFET developed by STripFET F6 technology and adopts a new groove gate structure. The resulting power MOSFET shows a very low RDS (conduction) in all packages.
STD30N6LF6AG Features
? Designed for automotive applications and
AEC-Q101 qualified
? Very low on-resistance
? Very low gate charge
? High avalanche ruggedness
? Low gate drive power loss
STD30N6LF6AG Applications
? Switching applications
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