STD30NF03LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOW THRESHOLD

Pin Count :

3

Rise Time :

205ns

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Operating Temperature :

-65°C~175°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Resistance :

25mOhm

Number of Elements :

1

Turn-Off Delay Time :

90 ns

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Fall Time (Typ) :

240 ns

Turn On Delay Time :

35 ns

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Series :

STripFET™ II

Lead Free :

Lead Free

Number of Pins :

3

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

STD30N

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Number of Terminations :

2

Current Rating :

30A

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

25m Ω @ 15A, 10V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

30A

FET Type :

N-Channel

Radiation Hardening :

No

Voltage - Rated DC :

30V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

50W

Transistor Element Material :

SILICON

Threshold Voltage :

1.7V

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

50W Tc