STD30NF03LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number :

STD30N

Turn-Off Delay Time :

90 ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Mount :

Surface Mount

Turn On Delay Time :

35 ns

Current Rating :

30A

Rds On (Max) @ Id, Vgs :

25m Ω @ 15A, 10V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

30A

Mounting Type :

Surface Mount

Resistance :

25mOhm

FET Type :

N-Channel

Power Dissipation-Max :

50W Tc

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1.7V

Transistor Application :

SWITCHING

Additional Feature :

LOW THRESHOLD

Power Dissipation :

50W

Operating Mode :

ENHANCEMENT MODE

Series :

STripFET™ II

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - annealed

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Rise Time :

205ns

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

240 ns

Number of Pins :

3

Pin Count :

3

Lead Free :

Lead Free

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

2

Operating Temperature :

-65°C~175°C TJ

Vgs (Max) :

±20V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Voltage - Rated DC :

30V