STD3NM60-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs (Max) :

±30V

Fall Time (Typ) :

10.5 ns

Mounting Type :

Through Hole

Power Dissipation-Max :

42W Tc

Input Capacitance (Ciss) (Max) @ Vds :

324pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Avalanche Energy Rating (Eas) :

200 mJ

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

3A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.5A, 10V

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Series :

MDmesh™

Number of Terminations :

3

Packaging :

Tube

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Pins :

3

Pin Count :

3

Base Part Number :

STD3N

Power Dissipation :

42W

Gate to Source Voltage (Vgs) :

30V

Rise Time :

4ns

FET Type :

N-Channel

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

3A

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material :

SILICON