STD3NK80Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Turn On Delay Time :

17 ns

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

2.4mm

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 1.25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Series :

SuperMESH™

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Weight :

4.535924g

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time :

27ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Pins :

3

Drain to Source Breakdown Voltage :

800V

Drain Current-Max (Abs) (ID) :

2.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Fall Time (Typ) :

40 ns

Power Dissipation-Max :

70W Tc

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1.25A

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

485pF @ 25V

Base Part Number :

STD3N

Mount :

Through Hole

Number of Terminations :

3

Height :

6.2mm

ECCN Code :

EAR99

Threshold Voltage :

3.75V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Turn-Off Delay Time :

36 ns

Vgs (Max) :

±30V

Length :

6.6mm

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

70W

RoHS Status :

ROHS3 Compliant