STD3NK60ZT4
- Mfr.Part #
- STD3NK60ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2.4A DPAK
- Stock
- 7,585
- In Stock :
- 7,585
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Length :
- 6.6mm
- Turn-Off Delay Time :
- 19 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 311pF @ 25V
- Power Dissipation :
- 45W
- Current Rating :
- 2.4A
- Pulsed Drain Current-Max (IDM) :
- 9.6A
- Fall Time (Typ) :
- 14 ns
- Number of Elements :
- 1
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3.6 Ω @ 1.2A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 3.75V
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Base Part Number :
- STD3N
- Turn On Delay Time :
- 9 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Nominal Vgs :
- 3.75 V
- Rise Time :
- 14ns
- Drain to Source Breakdown Voltage :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 2.4mm
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.2mm
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 600V
- Series :
- SuperMESH™
- Power Dissipation-Max :
- 45W Tc
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-252AA
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Resistance :
- 3.6Ohm
- Continuous Drain Current (ID) :
- 2.4A
- Gate Charge (Qg) (Max) @ Vgs :
- 11.8nC @ 10V
- Datasheets
- STD3NK60ZT4
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N-Channel Tape & Reel (TR) 3.6 Ω @ 1.2A, 10V ±30V 311pF @ 25V 11.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Description
The STD3NK60ZT4 is an N-channel 600 V, 3.2 |? typ., 2.4 A SuperMESH? Power MOSFETs in D2PAK, IPAK, DPAK, TO-220 and TO-220FP packages. These high-voltage components are Zener-protected N-channel Power MOSFETs created by STMicroelectronics employing SuperMESHTM technology, an improvement of the well-known PowerMESH?. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
Features
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
Extremely high dv/dt capability
100% avalanche tested
Applications
Switching applications
Small motor control
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
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