STD3NK60ZD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

14 ns

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Base Part Number :

STD3N

Vgs (Max) :

±30V

Power Dissipation :

45W

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

311pF @ 25V

Avalanche Energy Rating (Eas) :

150 mJ

Vgs(th) (Max) @ Id :

4.5V @ 50μA

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

9.6A

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.2A, 10V

Rise Time :

14ns

Turn-Off Delay Time :

19 ns

Packaging :

Tape and Reel (TR)

Pin Count :

3

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.4A

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

45W Tc

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

ECCN Code :

EAR99

Series :

SuperFREDmesh™

Gate Charge (Qg) (Max) @ Vgs :

11.8nC @ 10V

Qualification Status :

Not Qualified