STD3NK60Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

19 ns

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

2.4A

Input Capacitance (Ciss) (Max) @ Vds :

311pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - annealed

Fall Time (Typ) :

14 ns

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Length :

6.6mm

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Number of Elements :

1

Turn On Delay Time :

9 ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.2A, 10V

Packaging :

Tube

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

45W Tc

Power Dissipation :

45W

Height :

6.2mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

9.6A

Base Part Number :

STD3N

Pin Count :

3

Threshold Voltage :

3.75V

JESD-609 Code :

e3

Vgs (Max) :

±30V

Series :

SuperMESH™

FET Type :

N-Channel

Width :

2.4mm

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

RoHS Status :

ROHS3 Compliant

Rise Time :

14ns

Gate Charge (Qg) (Max) @ Vgs :

11.8nC @ 10V