STD3NK50ZT4
- Mfr.Part #
- STD3NK50ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.3A DPAK
- Stock
- 12,266
- In Stock :
- 12,266
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Base Part Number :
- STD3N
- Length :
- 6.6mm
- Height :
- 2.4mm
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Resistance :
- 3.3Ohm
- Voltage - Rated DC :
- 500V
- Fall Time (Typ) :
- 14 ns
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 24 ns
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Rise Time :
- 13ns
- Current Rating :
- 2.3A
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Series :
- SuperMESH™
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Tc
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 45W Tc
- JEDEC-95 Code :
- TO-252AA
- Power Dissipation :
- 45W
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 6.2mm
- Rds On (Max) @ Id, Vgs :
- 3.3 Ω @ 1.15A, 10V
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn) - annealed
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 25V
- Lead Free :
- Contains Lead
- Continuous Drain Current (ID) :
- 2.3A
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 9.2A
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Turn On Delay Time :
- 8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STD3NK50ZT4
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N-Channel Tape & Reel (TR) 3.3 Ω @ 1.15A, 10V ±30V 280pF @ 25V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NK50ZT4 Description
The SuperMESHTM series is created by optimizing ST's well-known strip-based PowerMESHTM layout to extremes. In addition to significantly lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high-voltage MOSFETs, including the innovative MDmeshTM devices, is complemented by this series.
STD3NK50ZT4 Features
-
Typical RDS(on) = 2.8?
-
100% avalanche tested
-
Gate charge minimized
-
100% avalanche tested
-
New high voltage benchmark
-
Extremely high dv/dt capability
STD3NK50ZT4 Applications
-
Lighting
-
AC adaptors and battery chargers
-
Switch-mode power supplies(SMPS)
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