STD3NK50Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 1.15A, 10V

Pulsed Drain Current-Max (IDM) :

9.2A

Number of Pins :

3

Packaging :

Tube

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

45W

Continuous Drain Current (ID) :

1.15A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Threshold Voltage :

3.75V

Vgs (Max) :

±30V

Mount :

Through Hole

Transistor Element Material :

SILICON

Fall Time (Typ) :

14 ns

Turn On Delay Time :

8 ns

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Nominal Vgs :

3.75 V

Drain to Source Breakdown Voltage :

500V

Power Dissipation-Max :

45W Tc

Rise Time :

13ns

Radiation Hardening :

No

Number of Elements :

1

Pin Count :

3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Base Part Number :

STD3N

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Number of Terminations :

3

Turn-Off Delay Time :

24 ns

Series :

SuperMESH™