STD3N95K5AG

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Mfr.Part #
STD3N95K5AG
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 950V 2A DPAK
Stock
4,182
In Stock :
4,182

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Number of Channels :
1
Power Dissipation :
45W
Input Capacitance (Ciss) (Max) @ Vds :
105pF @ 100V
Max Junction Temperature (Tj) :
150°C
Packaging :
Tape and Reel (TR)
Factory Lead Time :
17 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Series :
Automotive, AEC-Q101, MDmesh™ K5
Power Dissipation-Max :
45W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
2.63mm
FET Type :
N-Channel
Base Part Number :
STD3N
Continuous Drain Current (ID) :
2A
Turn-Off Delay Time :
20.5 ns
Drain to Source Breakdown Voltage :
950V
Vgs (Max) :
±30V
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id :
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
3.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5 Ω @ 1A, 10V
Mounting Type :
Surface Mount
Turn On Delay Time :
8.5 ns
Datasheets
STD3N95K5AG
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD3N95K5AG from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Base Part Number:STD3N, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, STD3N95K5AG pinout, STD3N95K5AG datasheet PDF, STD3N95K5AG amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD3N95K5AG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD3N95K5AG


N-Channel Tape & Reel (TR) 5 Ω @ 1A, 10V ±30V 105pF @ 100V 3.4nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD3N95K5AG Description    


MDmeshTM K5 technology, based on an innovative patented vertical structure, was used to build this very high voltage N-channel Power MOSFET. For applications needing great power density and efficiency, the outcome is a significant reduction in on-resistance and an ultra-low gate charge.



STD3N95K5AG Features


AEC-Q101 accredited.

Lowest RDS(on) x area in the industry.

The best FoM (figure of merit) in the industry.

Gate charge is really low.

Avalanche-proofed to the nth degree.

Zener-protected.


STD3N95K5AG Applications


Switching applications.


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