STD3N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

2.4mm

Factory Lead Time :

17 Weeks

Number of Elements :

1

Width :

6.2mm

Weight :

3.949996g

Rise Time :

7.5ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

5V @ 100µA

Turn On Delay Time :

8.5 ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Power Dissipation :

110W

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

800V

Power Dissipation-Max :

60W Tc

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Terminal Form :

Gull wing

Number of Pins :

3

Contact Plating :

Tin

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

FET Type :

N-Channel

Mount :

Surface Mount

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SuperMESH5™

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 1A, 10V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

2.5A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Avalanche Energy Rating (Eas) :

65 mJ

Turn-Off Delay Time :

20.5 ns

Length :

6.6mm

Base Part Number :

STD3N