STD3N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

385pF @ 25V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Vgs (Max) :

±30V

Resistance :

2.5Ohm

Turn On Delay Time :

9 ns

Drain to Source Breakdown Voltage :

620V

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

15.6 ns

Element Configuration :

Single

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

SWITCHING

Width :

6.2mm

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Number of Elements :

1

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Length :

6.6mm

Continuous Drain Current (ID) :

2.7A

Threshold Voltage :

3.75V

Power Dissipation :

45W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Turn-Off Delay Time :

22 ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Base Part Number :

STD3N

Rise Time :

6.8ns

Number of Terminations :

2

Height :

2.4mm

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.4A, 10V

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - annealed

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Series :

SuperMESH3™

Power Dissipation-Max :

45W Tc