STD3LN62K3
- Mfr.Part #
- STD3LN62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 2.5A DPAK
- Stock
- 8,469
- In Stock :
- 8,469
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 2.5A
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Power Dissipation :
- 45W
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 386pF @ 50V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 45W Tc
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 3Ohm
- Turn On Delay Time :
- 9 ns
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 1.25A, 10V
- Fall Time (Typ) :
- 27 ns
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 3.75V
- Mounting Type :
- Surface Mount
- Series :
- SuperMESH3™
- Length :
- 6.6mm
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Height :
- 2.4mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 620V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Pulsed Drain Current-Max (IDM) :
- 10A
- Base Part Number :
- STD3L
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 30 ns
- ECCN Code :
- EAR99
- Rise Time :
- 7ns
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Width :
- 6.2mm
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 3
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Datasheets
- STD3LN62K3
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N-Channel Tape & Reel (TR) 3 Ω @ 1.25A, 10V ±30V 386pF @ 50V 17nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD3LN62K3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 90 mJ.A device's maximal input capacitance is 386pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 620V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 10A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STD3LN62K3 Features
the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 10A.
a threshold voltage of 3.75V
STD3LN62K3 Applications
There are a lot of STMicroelectronics
STD3LN62K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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