STD38NH02LT4
- Mfr.Part #
- STD38NH02LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 38A DPAK
- Stock
- 31,283
- In Stock :
- 31,283
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 13.5m Ω @ 19A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Drain to Source Breakdown Voltage :
- 24V
- Packaging :
- Cut Tape (CT)
- Series :
- STripFET™ III
- Pin Count :
- 3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 152A
- Power Dissipation-Max :
- 40W Tc
- Continuous Drain Current (ID) :
- 38A
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-252AA
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1070pF @ 25V
- Transistor Element Material :
- SILICON
- Current Rating :
- 38A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Fall Time (Typ) :
- 12 ns
- Turn-Off Delay Time :
- 25 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- STD38
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.0135Ohm
- FET Type :
- N-Channel
- Rise Time :
- 62ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 40W
- Voltage - Rated DC :
- 24V
- Datasheets
- STD38NH02LT4
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N-Channel Cut Tape (CT) 13.5m Ω @ 19A, 10V ±20V 1070pF @ 25V 24nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD38NH02LT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 1070pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 24V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 152A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STD38NH02LT4 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 152A.
STD38NH02LT4 Applications
There are a lot of STMicroelectronics
STD38NH02LT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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