STD35NF06T4
- Mfr.Part #
- STD35NF06T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 35A DPAK
- Stock
- 1,238
- In Stock :
- 1,238
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JEDEC-95 Code :
- TO-252AA
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Turn-Off Delay Time :
- 36 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- STripFET™ II
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Pin Count :
- 3
- Weight :
- 4.535924g
- Current Rating :
- 35A
- Vgs (Max) :
- ±20V
- Length :
- 6.6mm
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Turn On Delay Time :
- 16 ns
- Drain to Source Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 35A
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 2.4mm
- Power Dissipation-Max :
- 80W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Number of Terminations :
- 2
- Resistance :
- 20mOhm
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 15 ns
- FET Type :
- N-Channel
- Width :
- 6.2mm
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 17.5A, 10V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STD35
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 55W
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 8ns
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- STD35NF06T4
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N-Channel Tape & Reel (TR) 20m Ω @ 17.5A, 10V ±20V 1300pF @ 25V 60nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD35NF06T4 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 35A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 36 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STD35NF06T4 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 36 ns
STD35NF06T4 Applications
There are a lot of STMicroelectronics
STD35NF06T4 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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