STD35NF06L

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.6mm

Rds On (Max) @ Id, Vgs :

17m Ω @ 17.5A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

60V

Base Part Number :

STD35

Max Junction Temperature (Tj) :

175°C

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

17.5A

Contact Plating :

Tin

Voltage - Rated DC :

60V

Height :

2.63mm

Turn-Off Delay Time :

40 ns

Current Rating :

35A

JESD-609 Code :

e3

Element Configuration :

Single

Power Dissipation :

80W

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Channels :

1

Transistor Application :

SWITCHING

Resistance :

17mOhm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Elements :

1

Width :

6.2mm

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

20 ns

Avalanche Energy Rating (Eas) :

280 mJ

REACH SVHC :

No SVHC

Vgs (Max) :

±16V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Terminations :

2

Rise Time :

100ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

80W Tc

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Threshold Voltage :

1V

FET Type :

N-Channel

Series :

STripFET™ II

Fall Time (Typ) :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

35A Tc