STD35NF06L
- Mfr.Part #
- STD35NF06L
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TO-252 MOSFETS ROHS
- Stock
- 5,625
- In Stock :
- 5,625
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Width :
- 6.2mm
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Resistance :
- 17mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 80W Tc
- Avalanche Energy Rating (Eas) :
- 280 mJ
- Base Part Number :
- STD35
- Height :
- 2.63mm
- Rise Time :
- 100ns
- Power Dissipation :
- 80W
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-252AA
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Fall Time (Typ) :
- 20 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Turn On Delay Time :
- 20 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 17.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Drain to Source Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Current Rating :
- 35A
- Operating Temperature :
- -55°C~175°C TJ
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Series :
- STripFET™ II
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 40 ns
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Max Junction Temperature (Tj) :
- 175°C
- Gate to Source Voltage (Vgs) :
- 16V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 17.5A
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Length :
- 6.6mm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Threshold Voltage :
- 1V
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- Datasheets
- STD35NF06L
STD35NF06L Documents
N-Channel Tape & Reel (TR) 17m Ω @ 17.5A, 10V ±16V 1700pF @ 25V 33nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
The STD35NF06LT4 is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
STD35NF06LT4 Features
Low threshold drive
Gate charge minimized
High peak power
High ruggedness capability
STD35NF06LT4 Applications
Industrial
Communications & Networking,
Computers & Computer Peripherals
Automotive
Switching application
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