STD35NF06L

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

16V

Radiation Hardening :

No

Max Junction Temperature (Tj) :

175°C

JEDEC-95 Code :

TO-252AA

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

17.5A

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

40 ns

Number of Terminations :

2

Length :

6.6mm

Current Rating :

35A

Rise Time :

100ns

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number :

STD35

Threshold Voltage :

1V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

60V

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Resistance :

17mOhm

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lead Free :

Lead Free

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

17m Ω @ 17.5A, 10V

Height :

2.63mm

Contact Plating :

Tin

Power Dissipation :

80W

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

280 mJ

Width :

6.2mm

Element Configuration :

Single

Series :

STripFET™ II

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

20 ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Turn On Delay Time :

20 ns

Voltage - Rated DC :

60V

Power Dissipation-Max :

80W Tc