STB6N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

650V

Rise Time :

7ns

Turn-Off Delay Time :

6.5 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Weight :

3.949996g

Gate Charge (Qg) (Max) @ Vgs :

9.8nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Continuous Drain Current (ID) :

4A

Base Part Number :

STB6N

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

226pF @ 100V

Turn On Delay Time :

19 ns

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Series :

MDmesh™

Number of Channels :

1

Power Dissipation-Max :

60W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 2A, 10V

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Threshold Voltage :

3V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

20 ns

Factory Lead Time :

26 Weeks