STB6N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Fall Time (Typ) :

18 ns

Rise Time :

11ns

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB6N

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

5A

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Turn-Off Delay Time :

31 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

525V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Additional Feature :

ULTRA-LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

20A

Vgs (Max) :

±30V

Number of Pins :

3

Series :

SuperMESH3™

Terminal Finish :

Matte Tin (Sn) - annealed

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.5A, 10V

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

5A

Number of Terminations :

2

Pin Count :

4

Lead Free :

Lead Free

Power Dissipation :

70W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Resistance :

1.2Ohm

Power Dissipation-Max :

70W Tc

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 50V

Peak Reflow Temperature (Cel) :

245

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

110 mJ

Time@Peak Reflow Temperature-Max (s) :

30