STB6N62K3
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- Mfr.Part #
- STB6N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 5.5A D2PAK
- Stock
- 33,425
- In Stock ：
- 33,425
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 49 ns
- Height :
- 4.6mm
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Drain to Source Breakdown Voltage :
- 620V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Mounting Type :
- Surface Mount
- Base Part Number :
- STB6N
- Length :
- 10.75mm
- Resistance :
- 1.2Ohm
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 5.5A
- Power Dissipation-Max :
- 90W Tc
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 3.75 V
- Turn On Delay Time :
- 22 ns
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Series :
- SuperMESH3™
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation :
- 90W
- Rise Time :
- 12ns
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 20 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 875pF @ 50V
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.8A, 10V
- Threshold Voltage :
- 3.75V
- Width :
- 10.4mm
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Radiation Hardening :
- No
- Datasheets
- STB6N62K3
N-Channel Tape & Reel (TR) 1.2 Ω @ 2.8A, 10V ±30V 875pF @ 50V 34nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB6N62K3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 875pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 620V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 620V.As a result of its turn-off delay time, which is 49 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 22 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3.75V.In addition to reducing power consumption, this device uses drive voltage (10V).
STB6N62K3 Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 49 ns
a threshold voltage of 3.75V
STB6N62K3 Applications
There are a lot of STMicroelectronics
STB6N62K3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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