STB60NF06T4
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- Mfr.Part #
- STB60NF06T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 60A D2PAK
- Stock
- 9,237
- In Stock ：
- 9,237
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 108ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -65°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1810pF @ 25V
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Element Configuration :
- Single
- Resistance :
- 16mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Termination :
- SMD/SMT
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 30A, 10V
- Fall Time (Typ) :
- 20 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Continuous Drain Current (ID) :
- 60A
- Gate to Source Voltage (Vgs) :
- 20V
- Base Part Number :
- STB60N
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 43 ns
- Power Dissipation :
- 110W
- Peak Reflow Temperature (Cel) :
- 245
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- JESD-609 Code :
- e3
- Nominal Vgs :
- 3 V
- Factory Lead Time :
- 12 Weeks
- Voltage - Rated DC :
- 60V
- Current Rating :
- 60A
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Dual Supply Voltage :
- 60V
- Series :
- STripFET™ II
- Threshold Voltage :
- 3V
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 240A
- Turn On Delay Time :
- 16 ns
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 110W Tc
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Pin Count :
- 3
- Datasheets
- STB60NF06T4
N-Channel Tape & Reel (TR) 16m Ω @ 30A, 10V ±20V 1810pF @ 25V 66nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB60NF06T4 Overview
A device's maximal input capacitance is 1810pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STB60NF06T4 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a threshold voltage of 3V
STB60NF06T4 Applications
There are a lot of STMicroelectronics
STB60NF06T4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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