STB60N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

8.5mOhm

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Terminal Form :

Gull wing

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs (Max) :

±20V

Series :

STripFET™ III

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

4 V

Radiation Hardening :

No

Continuous Drain Current (ID) :

80A

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-30 Code :

R-PSSO-G2

Base Part Number :

STB60N

Termination :

SMD/SMT

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Element Configuration :

Single

Case Connection :

DRAIN

Width :

10.4mm

Height :

4.6mm

Peak Reflow Temperature (Cel) :

245

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

110W Tc

Drain to Source Breakdown Voltage :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

20 ns

Dual Supply Voltage :

55V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 32A, 10V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

50ns

REACH SVHC :

No SVHC

Turn-Off Delay Time :

35 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Pbfree Code :

yes

Transistor Application :

SWITCHING

Fall Time (Typ) :

11.5 ns

Lead Free :

Lead Free

Power Dissipation :

110W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Length :

10.75mm

Number of Pins :

3

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V