STB60NF06LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

30 ns

Length :

10.4mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

35 ns

Terminal Form :

Gull wing

Number of Terminations :

2

Current Rating :

60A

Pulsed Drain Current-Max (IDM) :

240A

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Threshold Voltage :

1V

Peak Reflow Temperature (Cel) :

245

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Continuous Drain Current (ID) :

60A

Resistance :

16mOhm

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Series :

STripFET™ II

Power Dissipation-Max :

110W Tc

Turn-Off Delay Time :

55 ns

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Lead Free :

Lead Free

Additional Feature :

LOW THRESHOLD, AVALANCHE RATED

Number of Elements :

1

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

15V

Height :

4.6mm

Radiation Hardening :

No

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~175°C TJ

Width :

9.35mm

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

60V

Vgs (Max) :

±15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Rise Time :

220ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Weight :

4.535924g

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pin Count :

3

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

STB60N

Power Dissipation :

110W

REACH SVHC :

No SVHC

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3