STB60NE06L-16T4
- Mfr.Part #
- STB60NE06L-16T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 60A D2PAK
- Stock
- 40,153
- In Stock :
- 40,153
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 60V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 60V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 60A
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 15V
- Base Part Number :
- STB60N
- Element Configuration :
- Single
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Current-Max (IDM) :
- 240A
- Turn-Off Delay Time :
- 45 ns
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Pbfree Code :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- JESD-609 Code :
- e3
- Series :
- STripFET™ II
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 150W
- Rise Time :
- 155ns
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Current Rating :
- 60A
- Fall Time (Typ) :
- 220 ns
- Power Dissipation-Max :
- 150W Tc
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- FET Type :
- N-Channel
- Additional Feature :
- LOW THRESHOLD
- Vgs (Max) :
- ±15V
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 30A, 10V
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Datasheets
- STB60NE06L-16T4

N-Channel Tape & Reel (TR) 14m Ω @ 30A, 10V ±15V 4150pF @ 25V 70nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB60NE06L-16T4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 4150pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STB60NE06L-16T4 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 240A.
STB60NE06L-16T4 Applications
There are a lot of STMicroelectronics
STB60NE06L-16T4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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