SS9018GBU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminations :

3

Collector Base Voltage (VCBO) :

30V

Current Rating :

50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

50mA

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Continuous Collector Current :

50mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Weight :

179mg

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Published :

2002

Element Configuration :

Single

Number of Elements :

1

Number of Pins :

3

Collector Emitter Breakdown Voltage :

15V

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Max Power Dissipation :

400mW

hFE Min :

28

Transition Frequency :

1100MHz

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

15V

Power Dissipation :

400mW

JESD-609 Code :

e3

Frequency :

1.1GHz

Transistor Element Material :

SILICON

Radiation Hardening :

No

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Voltage - Rated DC :

30V

Factory Lead Time :

6 Weeks

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

72 @ 1mA 5V