SS9012HBU
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- Mfr.Part #
- SS9012HBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.5A TO92-3
- Stock
- 7,638
- In Stock ：
- 7,638
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -40V
- Weight :
- 179mg
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 20V
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Published :
- 2007
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -180mV
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Voltage - Rated DC :
- -20V
- Collector Emitter Breakdown Voltage :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 144 @ 50mA 1V
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Base Part Number :
- SS9012
- Current Rating :
- -500mA
- hFE Min :
- 64
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- SS9012HBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS9012HBU Overview
This device has a DC current gain of 144 @ 50mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -180mV.A VCE saturation (Max) of 600mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 500mA volts is possible.
SS9012HBU Features
the DC current gain for this device is 144 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
SS9012HBU Applications
There are a lot of ON Semiconductor
SS9012HBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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