SS9012HBU
- Mfr.Part #
- SS9012HBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.5A TO92-3
- Stock
- 7,638
- In Stock :
- 7,638
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 20V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Current Rating :
- -500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- hFE Min :
- 64
- ECCN Code :
- EAR99
- Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Voltage - Rated DC :
- -20V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Element Configuration :
- Single
- Max Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- SS9012
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 144 @ 50mA 1V
- Weight :
- 179mg
- Transistor Type :
- PNP
- Published :
- 2007
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- -40V
- Collector Emitter Saturation Voltage :
- -180mV
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 20V
- Datasheets
- SS9012HBU
SS9012HBU Documents
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS9012HBU Overview
This device has a DC current gain of 144 @ 50mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -180mV.A VCE saturation (Max) of 600mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 500mA volts is possible.
SS9012HBU Features
the DC current gain for this device is 144 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
SS9012HBU Applications
There are a lot of ON Semiconductor
SS9012HBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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