SS9012HBU
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- Mfr.Part #
- SS9012HBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.5A TO92-3
- Stock
- 7,638
- In Stock ：
- 7,638
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Voltage - Rated DC :
- -20V
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 20V
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -180mV
- Weight :
- 179mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 144 @ 50mA 1V
- Collector Emitter Breakdown Voltage :
- 20V
- Base Part Number :
- SS9012
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Element Material :
- SILICON
- Current Rating :
- -500mA
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -40V
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Number of Pins :
- 3
- Published :
- 2007
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 64
- Packaging :
- Bulk
- Polarity/Channel Type :
- PNP
- Datasheets
- SS9012HBU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS9012HBU Overview
This device has a DC current gain of 144 @ 50mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -180mV.A VCE saturation (Max) of 600mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 500mA volts is possible.
SS9012HBU Features
the DC current gain for this device is 144 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
SS9012HBU Applications
There are a lot of ON Semiconductor
SS9012HBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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