SS8550BBU
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- Mfr.Part #
- SS8550BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A TO92-3
- Stock
- 5,925
- In Stock ：
- 5,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 25V
- Current Rating :
- -1.5A
- Frequency :
- 200MHz
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 200MHz
- hFE Min :
- 85
- Element Configuration :
- Single
- Weight :
- 179mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Emitter Saturation Voltage :
- -280mV
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- SS8550
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- -25V
- Power Dissipation :
- 1W
- Number of Elements :
- 1
- Number of Pins :
- 3
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Max Collector Current :
- 1.5A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Transition Frequency :
- 200MHz
- Emitter Base Voltage (VEBO) :
- -6V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Max Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Datasheets
- SS8550BBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8550BBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 100mA 1V.With a collector emitter saturation voltage of -280mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 80mA, 800mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
SS8550BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550BBU Applications
There are a lot of ON Semiconductor
SS8550BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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