SS8550
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- Mfr.Part #
- SS8550
- Manufacturer
- MDD
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A SOT23
- Stock
- 24,406
- In Stock ：
- 24,406
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- SS8550
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- Published :
- 2007
- Max Breakdown Voltage :
- 25V
- Voltage - Rated DC :
- -25V
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 200MHz
- Number of Pins :
- 3
- Weight :
- 240mg
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Current Rating :
- -1.5A
- Collector Emitter Breakdown Voltage :
- 25V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Base Voltage (VCBO) :
- -40V
- Number of Elements :
- 1
- Power Dissipation :
- 1W
- Max Collector Current :
- 1.5A
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transition Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- -280mV
- Packaging :
- Tape and Box (TB)
- Lead Free :
- Lead Free
- Factory Lead Time :
- 6 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 25V
- Frequency :
- 200MHz
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- hFE Min :
- 85
- Datasheets
- SS8550
SS8550 Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8550DTA Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -280mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 1.5A volts.
SS8550DTA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550DTA Applications
There are a lot of ON Semiconductor
SS8550DTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| SS8550DTA | MDD | 17,469 | TRANS PNP 25V 1.5A TO92-3 |
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