SS8550CTA
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- Mfr.Part #
- SS8550CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A TO92-3
- Stock
- 35,977
- In Stock ：
- 35,977
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 1W
- Width :
- 4.19mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 5.2mm
- Collector Base Voltage (VCBO) :
- -40V
- Frequency :
- 200MHz
- Mounting Type :
- Through Hole
- Published :
- 2004
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 25V
- hFE Min :
- 85
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -280mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Current Rating :
- -1.5A
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Pins :
- 3
- Transition Frequency :
- 200MHz
- Max Collector Current :
- 1.5A
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -6V
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 200MHz
- Mount :
- Through Hole
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Base Part Number :
- SS8550
- Collector Emitter Breakdown Voltage :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Max Power Dissipation :
- 1W
- Weight :
- 240mg
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Height :
- 5.33mm
- Radiation Hardening :
- No
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -25V
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Datasheets
- SS8550CTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8550CTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -280mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 80mA, 800mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 1.5A volts.
SS8550CTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550CTA Applications
There are a lot of ON Semiconductor
SS8550CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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