SS8550-D-AP

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Mfr.Part #
SS8550-D-AP
Manufacturer
Micro Commercial Components (MCC)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet
Download
Description
TRANS PNP 25V 1.5A TO92
Stock
28,568
In Stock :
28,568

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Manufacturer :
Micro Commercial Components (MCC)
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Power - Max :
1W
JESD-30 Code :
O-PBCY-T3
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Mounting Type :
Through Hole
Transistor Type :
PNP
JESD-609 Code :
e3
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
100nA
Transition Frequency :
190MHz
Vce Saturation (Max) @ Ib, Ic :
800mV @ 80mA, 800mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Collector Emitter Breakdown (Max) :
25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Pbfree Code :
yes
Terminal Position :
BOTTOM
Number of Terminations :
3
Pin Count :
3
Configuration :
Single
Surface Mount :
No
Frequency - Transition :
190MHz
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
1.5A
Terminal Finish :
Matte Tin (Sn)
Datasheets
SS8550-D-AP
Introducing Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) SS8550-D-AP from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Number of Terminations:3, SS8550-D-AP pinout, SS8550-D-AP datasheet PDF, SS8550-D-AP amp .Beyond Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) SS8550-D-AP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Micro Commercial Components (MCC) SS8550-D-AP


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole

SS8550-D-AP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 80mA, 800mA.A transition frequency of 190MHz is present in the part.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.

SS8550-D-AP Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 800mV @ 80mA, 800mA
a transition frequency of 190MHz


SS8550-D-AP Applications


There are a lot of Micro Commercial Co
SS8550-D-AP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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