SS8550BBU
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- Mfr.Part #
- SS8550BBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A TO92-3
- Stock
- 33,877
- In Stock ：
- 33,877
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 200MHz
- Number of Terminations :
- 3
- Frequency :
- 200MHz
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 85
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- -40V
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Packaging :
- Bulk
- Voltage - Rated DC :
- -25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Emitter Base Voltage (VEBO) :
- -6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- SS8550
- Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 1.5A
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Current Rating :
- -1.5A
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -280mV
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Max Breakdown Voltage :
- 30V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Weight :
- 179mg
- Transition Frequency :
- 200MHz
- Datasheets
- SS8550BBU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8550BBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 100mA 1V.With a collector emitter saturation voltage of -280mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 80mA, 800mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
SS8550BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550BBU Applications
There are a lot of ON Semiconductor
SS8550BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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