SS8550BTA
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- Mfr.Part #
- SS8550BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A TO92-3
- Stock
- 27,647
- In Stock ：
- 27,647
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 1.5A
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Supplier Device Package :
- TO-92-3
- Power - Max :
- 1W
- Frequency - Transition :
- 200MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- SS8550BTA
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8550BTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 80mA, 800mA.The product comes in the supplier device package of TO-92-3.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.
SS8550BTA Features
the DC current gain for this device is 85 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
the supplier device package of TO-92-3
SS8550BTA Applications
There are a lot of Rochester Electronics, LLC
SS8550BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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