SP8K33FRATB
- Mfr.Part #
- SP8K33FRATB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- 4V DRIVE NCH+NCH MOSFET (CORRESP
- Stock
- 2,500
- In Stock :
- 2,500
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Continuous Drain Current (ID) :
- 5A
- Number of Elements :
- 2
- Drain Current-Max (Abs) (ID) :
- 5A
- Number of Terminations :
- 8
- Rds On (Max) @ Id, Vgs :
- 48m Ω @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 10V
- Threshold Voltage :
- 2.5V
- Max Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 20 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- REACH SVHC :
- Unknown
- FET Feature :
- Standard
- Number of Pins :
- 8
- Published :
- 2015
- Reach Compliance Code :
- not_compliant
- FET Type :
- 2 N-Channel (Dual)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.056Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 60V
- Series :
- Automotive, AEC-Q101
- Pulsed Drain Current-Max (IDM) :
- 20A
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- SP8K33FRATB

SP8K33FRATB datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at
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