SP8K31FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Max Power Dissipation :

2W

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Threshold Voltage :

2.5V

Published :

2017

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Voltage (Vdss) :

60V

Packaging :

Cut Tape (CT)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

3.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

120m Ω @ 3.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Series :

Automotive, AEC-Q101

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

14A

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Factory Lead Time :

20 Weeks

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.15Ohm

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

FET Feature :

Standard