SP8K32FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Power - Max :

2W

Pulsed Drain Current-Max (IDM) :

18A

FET Feature :

Standard

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Operating Temperature :

150°C TJ

Factory Lead Time :

20 Weeks

Surface Mount :

yes

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

4.5A

Published :

2017

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 10V

Rds On (Max) @ Id, Vgs :

65m Ω @ 4.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Terminations :

8

Series :

Automotive, AEC-Q101

Drain-source On Resistance-Max :

0.077Ohm