SP8K32FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 10V

Number of Elements :

2

DS Breakdown Voltage-Min :

60V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Rds On (Max) @ Id, Vgs :

65m Ω @ 4.5A, 10V

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

60V

Drain Current-Max (Abs) (ID) :

4.5A

Surface Mount :

yes

Drain-source On Resistance-Max :

0.077Ohm

Power - Max :

2W

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2017

Pulsed Drain Current-Max (IDM) :

18A

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

Mounting Type :

Surface Mount

Number of Terminations :

8

ECCN Code :

EAR99

FET Feature :

Standard

Factory Lead Time :

20 Weeks