SIZ998DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V, 19.8nC @ 4.5V

FET Type :

2 N-Channel (Dual), Schottky

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 15V 2620pF @ 15V

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 15A, 10V, 2.8m Ω @ 19A, 10V

Package / Case :

8-PowerWDFN

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

20A Tc 60A Tc

Mount :

Surface Mount

Power - Max :

20.2W 32.9W

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Mounting Type :

Surface Mount

FET Feature :

Standard

Published :

2017

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

30V