SIZ918DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Continuous Drain Current (ID) :

28A

FET Type :

2 N-Channel (Half Bridge)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Package / Case :

8-PowerWDFN

Number of Pins :

10

Factory Lead Time :

14 Weeks

Avalanche Energy Rating (Eas) :

16 mJ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Drain Current-Max (Abs) (ID) :

16A

Number of Channels :

2

Element Configuration :

Dual

Published :

2013

Power - Max :

29W 100W

Base Part Number :

SIZ918

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Series :

TrenchFET®

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Pulsed Drain Current-Max (IDM) :

50A

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-N6

Rds On (Max) @ Id, Vgs :

12m Ω @ 13.8A, 10V

Current - Continuous Drain (Id) @ 25°C :

16A 28A

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 15V

RoHS Status :

ROHS3 Compliant

Height :

750μm

Case Connection :

DRAIN SOURCE

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

100W

Turn-Off Delay Time :

40 ns

Length :

6mm

Width :

5mm

Threshold Voltage :

1.2V

Mount :

Surface Mount