SIZ998BDT-T1-GE3
- Mfr.Part #
- SIZ998BDT-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- DUAL N-CHANNEL 30-V (D-S) MOSFET
- Stock
- 6,017
- In Stock :
- 6,017
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Product Category :
- MOSFET
- Series :
- TrenchFET® Gen IV
- RoHS :
- Details
- FET Feature :
- Standard
- Input Capacitance (Ciss) (Max) @ Vds :
- 790pF @ 15V, 2130pF @ 15V
- Technology :
- Si
- Number of Channels :
- 2 Channel
- Supplier Device Package :
- 8-PowerPair® (6x5)
- Drain to Source Voltage (Vdss) :
- 30V
- Brand :
- Vishay / Siliconix
- Channel Type :
- Dual N
- Mounting Style :
- SMD/SMT
- Channel Mode :
- Enhancement
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Subcategory :
- MOSFETs
- Packaging :
- MouseReel
- Product Type :
- MOSFET
- Mounting Type :
- Surface Mount
- Continuous Drain Current Id :
- 94.6A
- FET Type :
- 2 N-Channel (Dual), Schottky
- MSL :
- MSL 1 - Unlimited
- Product Status :
- Active
- Package / Case :
- 8-PowerWDFN
- Tradename :
- TrenchFET
- Current - Continuous Drain (Id) @ 25°C :
- 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V, 46.7nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Rds On (Max) @ Id, Vgs :
- 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
- Power - Max :
- 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
- Transistor Polarity :
- N Channel + Schottky
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Manufacturer :
- Vishay
- Minimum Operating Temperature :
- - 55 C
- Qualification :
- -
- Base Product Number :
- SIZ998
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Datasheets
- SIZ998BDT-T1-GE3
SIZ998BDT-T1-GE3 datasheet pdf and Unclassified product details from Vishay stock available at
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