SIZ904DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

24m Ω @ 7.8A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

30A

Avalanche Energy Rating (Eas) :

5 mJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

Number of Terminations :

6

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V

Length :

6mm

Published :

2016

Height :

750μm

Transistor Element Material :

SILICON

Series :

TrenchFET®

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Power - Max :

20W 33W

Number of Channels :

2

Width :

5mm

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN SOURCE

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-N6

FET Type :

2 N-Channel (Half Bridge)

Base Part Number :

SIZ904

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Rise Time :

9ns

Package / Case :

6-PowerPair™

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 15V

Resistance :

24mOhm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

12A 16A

Fall Time (Typ) :

8 ns

Max Power Dissipation :

33W

Lead Free :

Lead Free

Continuous Drain Current (ID) :

16A

ECCN Code :

EAR99