SIGC10T60EX1SA5

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Mfr.Part #
SIGC10T60EX1SA5
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT CHIP
Stock
15,510
In Stock :
15,510

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Transistor Element Material :
SILICON
Vce(on) (Max) @ Vge, Ic :
1.9V @ 15V, 20A
ECCN Code :
EAR99
Current - Collector (Ic) (Max) :
20A
IGBT Type :
Trench Field Stop
Package / Case :
Die
JESD-30 Code :
R-XUUC-N2
Input Type :
Standard
Surface Mount :
yes
Drain to Source Voltage (Vdss) :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Transistor Application :
POWER CONTROL
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-40°C~175°C TJ
Number of Elements :
1
Series :
TRENCHSTOP™
Configuration :
Single
Terminal Form :
NO LEAD
Collector Emitter Voltage (VCEO) :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Collector Pulsed (Icm) :
60A
Number of Terminations :
2
Published :
2010
Max Dual Supply Voltage :
600V
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Halogen Free :
Halogen Free
Terminal Position :
UPPER
Datasheets
SIGC10T60EX1SA5
Introducing Transistors - IGBTs - Single Infineon Technologies SIGC10T60EX1SA5 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Die, Mounting Type:Surface Mount, Operating Temperature:-40°C~175°C TJ, Number of Terminations:2, SIGC10T60EX1SA5 pinout, SIGC10T60EX1SA5 datasheet PDF, SIGC10T60EX1SA5 amp .Beyond Transistors - IGBTs - Single Infineon Technologies SIGC10T60EX1SA5 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SIGC10T60EX1SA5


SIGC10T60EX1SA5 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

SIGC10T60EX1SA5 Description

 

SIGC10T60EX1SA5 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC10T60EX1SA5 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC10T60EX1SA5 has the common source configuration.

 

 

SIGC10T60EX1SA5 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

SIGC10T60EX1SA5 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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