SIGC07T60NCX1SA4
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- Mfr.Part #
- SIGC07T60NCX1SA4
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 3 CHIP 600V WAFER
- Stock
- 34,587
- In Stock ：
- 34,587
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- Die
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- Die
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 6A
- Input Type :
- Standard
- Current - Collector (Ic) (Max) :
- 6A
- Test Condition :
- 300V, 6A, 54Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- IGBT Type :
- NPT
- Current - Collector Pulsed (Icm) :
- 18A
- RoHS Status :
- ROHS3 Compliant
- Td (on/off) @ 25°C :
- 21ns/110ns
- Datasheets
- SIGC07T60NCX1SA4
SIGC07T60NCX1SA4 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SIGC07T60NCX1SA4 Description
SIGC07T60NCX1SA4 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC07T60NCX1SA4 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
SIGC07T60NCX1SA4 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC07T60NCX1SA4 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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