SIGC07T60SNCX1SA3

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Mfr.Part #
SIGC07T60SNCX1SA3
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT 3 CHIP 600V WAFER
Stock
25,251
In Stock :
25,251

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Terminal Position :
UPPER
Surface Mount :
yes
Terminal Form :
NO LEAD
Published :
2016
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Number of Terminations :
2
Current - Collector Pulsed (Icm) :
18A
Input Type :
Standard
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Transistor Application :
POWER CONTROL
Lead Free :
Lead Free
Pin Count :
2
Turn Off Time-Nom (toff) :
318 ns
Max Dual Supply Voltage :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Package / Case :
Die
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
IGBT Type :
NPT
Halogen Free :
Halogen Free
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 6A
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
600V
Collector Emitter Voltage (VCEO) :
600V
Td (on/off) @ 25°C :
24ns/248ns
Turn On Time :
41 ns
Pbfree Code :
No
Configuration :
Single
Current - Collector (Ic) (Max) :
6A
JESD-30 Code :
S-XUUC-N2
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Test Condition :
400V, 6A, 50 Ω, 15V
Datasheets
SIGC07T60SNCX1SA3
Introducing Transistors - IGBTs - Single Infineon Technologies SIGC07T60SNCX1SA3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:Die, SIGC07T60SNCX1SA3 pinout, SIGC07T60SNCX1SA3 datasheet PDF, SIGC07T60SNCX1SA3 amp .Beyond Transistors - IGBTs - Single Infineon Technologies SIGC07T60SNCX1SA3 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



SIGC07T60SNCX1SA3 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

SIGC07T60SNCX1SA3                        Description

 

IGBT Chip. An Insulated Gate Bipolar Transistor is a BJT that is built in a way that allows for fast switching with low power losses, making it ideal for use as a switch in high power circuits. It is commonly packaged along with a flyback (also called freewheeling) diode, which prevents damage from inductive kickback.

 



SIGC07T60SNCX1SA3                       FEATURES


· 600V NPT technology

· 100μm chip

· short circuit prove

· positive temperature coefficient

· easy paralleling

 

SIGC07T60SNCX1SA3                       Applications


· drives


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