SI5935CDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Fall Time (Typ) :

32 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.1A, 4.5V

Continuous Drain Current (ID) :

3.1A

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Breakdown Voltage :

-20V

Element Configuration :

Dual

Terminal Finish :

PURE MATTE TIN

Number of Elements :

2

Factory Lead Time :

14 Weeks

FET Feature :

Standard

Max Power Dissipation :

3.1W

Length :

3.05mm

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.1Ohm

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Rise Time :

32ns

Base Part Number :

SI5935

Package / Case :

8-SMD, Flat Lead

Number of Pins :

8

Height :

1.1mm

Weight :

84.99187mg

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4A

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Mounting Type :

Surface Mount

Width :

1.65mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.3W

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

25 ns

Published :

2012

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4A

Pin Count :

8

Terminal Form :

C BEND

FET Type :

2 P-Channel (Dual)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V