RS1E350BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

140A

Published :

2015

Current - Continuous Drain (Id) @ 25°C :

35A Ta

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mount :

Surface Mount

Case Connection :

DRAIN

Terminal Form :

Flat

Package / Case :

8-PowerTDFN

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

35W Tc

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Drain-source On Resistance-Max :

0.0025Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 35A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Continuous Drain Current (ID) :

35A

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 15V

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

30V