RS1E240GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

70.590313mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

16.3 ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F5

DS Breakdown Voltage-Min :

30V

Lead Free :

Lead Free

ECCN Code :

EAR99

Continuous Drain Current (ID) :

24A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mount :

Surface Mount

Case Connection :

DRAIN

Power Dissipation-Max :

3W Ta 27.4W Tc

Number of Terminations :

5

Turn-Off Delay Time :

47 ns

Rise Time :

7.8ns

Published :

2015

Fall Time (Typ) :

11.5 ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 24A, 10V

Drain-source On Resistance-Max :

0.0044Ohm

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

96A

Number of Channels :

1

Number of Elements :

1

Terminal Form :

Flat

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

20 Weeks

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

24A Ta