RS1E200GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Weight :

70.590313mg

Number of Terminations :

5

Turn On Delay Time :

13.2 ns

Case Connection :

DRAIN

Fall Time (Typ) :

8.4 ns

Lead Free :

Lead Free

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1

Transistor Element Material :

SILICON

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

16.8nC @ 10V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Power Dissipation-Max :

3W Ta 25.1W Tc

Turn-Off Delay Time :

34.7 ns

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Reach Compliance Code :

not_compliant

Terminal Form :

Flat

Mount :

Surface Mount

Published :

2013

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

7.2ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Elements :

1

Factory Lead Time :

20 Weeks

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

20A

Number of Pins :

8

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-F5