RS1E180BNTB

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Mfr.Part #
RS1E180BNTB
Manufacturer
ROHM Semiconductor
Package / Case
Datasheet
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Description
MOSFET N-CHANNEL 30V 60A 8-HSOP
Stock
2,543
In Stock :
2,543

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
5
Lead Free :
Lead Free
Pbfree Code :
yes
DS Breakdown Voltage-Min :
30V
Polarity/Channel Type :
N-Channel
Published :
2015
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Surface Mount :
yes
Avalanche Energy Rating (Eas) :
23.5 mJ
Drain Current-Max (Abs) (ID) :
18A
Number of Elements :
1
Packaging :
Cut Tape (CT)
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
72A
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
10 Weeks
JESD-30 Code :
R-PDSO-F5
Drain-source On Resistance-Max :
0.0069Ohm
RoHS Status :
ROHS3 Compliant
Terminal Form :
Flat
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
RS1E180BNTB
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RS1E180BNTB from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, RS1E180BNTB pinout, RS1E180BNTB datasheet PDF, RS1E180BNTB amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RS1E180BNTB ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RS1E180BNTB


Cut Tape (CT)

RS1E180BNTB Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 23.5 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 18A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.

RS1E180BNTB Features


the avalanche energy rating (Eas) is 23.5 mJ
based on its rated peak drain current 72A.


RS1E180BNTB Applications


There are a lot of ROHM Semiconductor
RS1E180BNTB applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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