RS1E281BNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 15V

Avalanche Energy Rating (Eas) :

190 mJ

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Elements :

1

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Number of Terminations :

5

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

28A Ta 80A Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

112A

Drain-source On Resistance-Max :

0.0032Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Terminal Position :

Dual

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 28A, 10V

Power Dissipation-Max :

3W Ta

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

28A

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED