RFD16N05
- Mfr.Part #
- RFD16N05
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- MEGAFET
- Drain-source On Resistance-Max :
- 0.056Ohm
- Voltage - Rated DC :
- 50V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 30ns
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 55 ns
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 72W Tc
- Packaging :
- Tube
- Element Configuration :
- Single
- Power Dissipation :
- 72W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Pulsed Drain Current-Max (IDM) :
- 45A
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Drain to Source Breakdown Voltage :
- 50V
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-252AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 16A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 16A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 20V
- Fall Time (Typ) :
- 30 ns
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 16A
- Datasheets
- RFD16N05

N-Channel Tube 47m Ω @ 16A, 10V ±20V 900pF @ 25V 80nC @ 20V TO-251-3 Short Leads, IPak, TO-251AA
RFD16N05 Description
The ON Semiconductor RFD16N05 is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It can be operated directly from integrated circuits.
RFD16N05 Features
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
-
175°C Operating Temperature
-
16A, 50V
-
rDS(ON)= 0.047Ω
-
Temperature Compensating PSPICE Model
RFD16N05 Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
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