RFD14N05L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Recovery Time :

125 ns

Resistance :

100MOhm

ECCN Code :

EAR99

Radiation Hardening :

No

Mount :

Through Hole

Threshold Voltage :

2V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Length :

6.8mm

Power Dissipation :

48W

Case Connection :

DRAIN

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Drain to Source Breakdown Voltage :

50V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Turn-Off Delay Time :

42 ns

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Continuous Drain Current (ID) :

14A

Power Dissipation-Max :

48W Tc

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 5V

Voltage - Rated DC :

50V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

6.3mm

Rise Time :

24ns

Contact Plating :

Tin

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

8 Weeks

Number of Pins :

3

JESD-609 Code :

e3

Vgs (Max) :

±10V

Fall Time (Typ) :

16 ns

Element Configuration :

Single

Current Rating :

14A

Drive Voltage (Max Rds On,Min Rds On) :

5V

Published :

2004

Weight :

343.08mg

Packaging :

Tube

Turn On Delay Time :

13 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Width :

2.5mm

Gate to Source Voltage (Vgs) :

10V

Lead Free :

Lead Free