RFD14N05L
- Mfr.Part #
- RFD14N05L
- Manufacturer
- Harris Corporation
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 14A IPAK
- Stock
- 35,439
- In Stock :
- 35,439
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Published :
- 2004
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Continuous Drain Current (ID) :
- 14A
- Radiation Hardening :
- No
- Threshold Voltage :
- 2V
- Current Rating :
- 14A
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Length :
- 6.8mm
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 16 ns
- Vgs (Max) :
- ±10V
- Turn-Off Delay Time :
- 42 ns
- Voltage - Rated DC :
- 50V
- Weight :
- 343.08mg
- Drain to Source Breakdown Voltage :
- 50V
- Power Dissipation :
- 48W
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 13 ns
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Resistance :
- 100MOhm
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Gate to Source Voltage (Vgs) :
- 10V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max :
- 48W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 14A, 5V
- Height :
- 6.3mm
- Rise Time :
- 24ns
- RoHS Status :
- ROHS3 Compliant
- Recovery Time :
- 125 ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Width :
- 2.5mm
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Datasheets
- RFD14N05L

N-Channel Tube 100m Ω @ 14A, 5V ±10V 670pF @ 25V 40nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
RFD14N05L Description
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
RFD14N05L Features
14A, 50V
rDS(ON) = 0.100?
Temperature Compensating PSPICE? Model
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175oC Operating Temperature
Related Literature
TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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